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參數資料
| 型號： | AO3700 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強模式場效應晶體管肖特基二極管 |
| 文件頁數： | 5/5頁 |
| 文件大小： | 125K |
| 代理商： | AO3700 |
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
0
20
40
60
80
100
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
0.1
0.2
0.3
0.4
0.5
0
25
50
Temperature (°C)
75
100
125
150
V
F
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=135°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=0.5A
25°C
V
R
=16V
125°C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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