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參數資料
| 型號： | AO3434 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 168K |
| 代理商： | AO3434 |
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0
1
2
3
4
5
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
G
S
(V
o
lt
s
)
0
100
200
300
400
500
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
it
a
n
c
e
(p
F
)
Ciss
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θθθθJ
A
N
o
rm
a
li
z
e
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Coss
Crss
VDS=15V
ID=4.2A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
VDS (Volts)
I D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
10ms
1m
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
10s
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AO3434_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO3434A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 30V 4A SOT23 |
| AO3434L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO3435 | 功能描述:MOSFET P CH 20V 2.9A SOT23 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO3435_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
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