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參數(shù)資料
| 型號： | AO3434 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 168K |
| 代理商： | AO3434 |
AO3434
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
10
uA
VGS(th)
1
1.32
1.8
V
ID(ON)
30
A
43
52
TJ=125°C
58
74
59
75
m
gFS
8.5
S
VSD
0.77
1
V
IS
1.8
A
Ciss
269
340
pF
Coss
65
pF
Crss
41
pF
Rg
1
1.5
Qg(10V)
5.7
7.2
nC
Qg(4.5V)
3
nC
Qgs
1.37
nC
Qgd
0.65
nC
tD(on)
2.6
3.8
ns
tr
5.5
8
ns
tD(off)
15.2
23
ns
tf
3.7
5.5
ns
trr
15.5
21
ns
Qrr
7.1
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=4.2A
Reverse Transfer Capacitance
IF=4.2A, dI/dt=100A/s
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=250A
VDS=30V, VGS=0V
VDS=0V, VGS= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
VGS=4.5V, ID=2A
IS=1A,VGS=0V
VDS=5V, ID=4.2A
Total Gate Charge
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.6,
RGEN=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=4.2A
Total Gate Charge
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev3:Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO3434_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO3434A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 30V 4A SOT23 |
| AO3434L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO3435 | 功能描述:MOSFET P CH 20V 2.9A SOT23 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO3435_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
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