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參數(shù)資料
| 型號： | AO3413 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 456K |
| 代理商： | AO3413 |
AO3413
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-0.4
-0.65
-1
V
ID(ON)
-15
A
56
80
TJ=125°C
80
115
70
100
m
85
130
m
gFS
12
S
VSD
-0.7
-1
V
IS
-1.4
A
Ciss
560
745
pF
Coss
80
pF
Crss
70
pF
Rg
15
23
Qg
8.5
11
nC
Qgs
1.2
nC
Qgd
2.1
nC
tD(on)
7.2
ns
tr
36
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=3.3,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Gate Source Charge
m
VGS=-2.5V, ID=-2.6A
IS=-1A,VGS=0V
VDS=-5V, ID=-3A
VGS=-1.8V, ID=-1A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Gate Threshold Voltage
VDS=VGS ID=-250A
VDS=-20V, VGS=0V
VDS=0V, VGS=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
IDSS
A
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
Reverse Transfer Capacitance
Rev 9: July 2010
www.aosmd.com
Page 2 of 5
tr
36
ns
tD(off)
53
ns
tf
56
ns
trr
37
49
ns
Qrr
27
nC
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=3.3,
RGEN=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s
IF=-3A, dI/dt=100A/s
A: The value of R θJA is measured with the device mounted on 1 in
2 FR-4 board with 2oz. copper, in a still air environment with T
A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300
s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 9: July 2010
www.aosmd.com
Page 2 of 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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