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參數(shù)資料
| 型號： | AO3407A |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 228K |
| 代理商： | AO3407A |
AO3407A
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1.4
-1.9
-2.4
V
ID(ON)
-25
A
34
48
TJ=125°C
52
68
54
78
m
gFS
10
S
VSD
-0.7
-1
V
IS
-2
A
Ciss
415
520
625
pF
Coss
70
100
130
pF
Crss
40
65
90
pF
Rg
3.5
7.5
11.5
Qg(10V)
7.4
9.2
11
nC
Qg(4.5V)
3.7
4.6
6
nC
Qgs
1.3
1.6
1.9
nC
Qgd
1.3
2.2
3.1
nC
tD(on)
7.5
ns
tr
5.5
ns
tD(off)
19
ns
tf
7
ns
trr
8.8
11
13
ns
Qrr
4
5.3
6.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Reverse Transfer Capacitance
IF=-4.3A, dI/dt=100A/s
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.3A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Drain-Source Breakdown Voltage
Gate resistance
VGS=0V, VDS=0V, f=1MHz
A
VDS=VGS ID=-250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
IS=-1A,VGS=0V
VDS=-5V, ID=-4.3A
VGS=-4.5V, ID=-3A
Forward Transconductance
Diode Forward Voltage
Turn-Off Fall Time
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-4.3A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3.5,
RGEN=3
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 4: May 2011
www.aosmd.com
Page 2 of 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO3407A_003 | 制造商:Alpha & Omega Semiconductor 功能描述:PN may be NE DW NA |
| AO3407A_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO3407L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO3409 | 功能描述:MOSFET P-CH -30V -2.6A SOT23 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO3409_103 | 功能描述:MOSFET P-CH 30V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):最後搶購 標準包裝:3,000 |
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