參數(shù)資料
型號: AND8044
廠商: ON SEMICONDUCTOR
英文描述: Single-Channel 1206A ChipFET TM Power MOSFET Recommended Pad Pattern and Thermal Performance
中文描述: 單通道1206A ChipFET的商標(biāo)功率MOSFET推薦墊模式與熱性能
文件頁數(shù): 1/4頁
文件大?。?/td> 51K
代理商: AND8044
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev.0
1
Publication Order Number:
AN8044/D
AND8044/D
Single-Channel 1206A
ChipFET Power MOSFET
Recommended Pad Pattern
and Thermal Performance
INTRODUCTION
New ON Semiconductor ChipFETs in the leadless
1206A package feature the same outline as popular 1206A
resistors and capacitors but provide all the performance of
true power semiconductor devices. The 1206A ChipFET
has the same footprint as the body of the TSOP–6 and can
be thought of as a leadless TSOP–6 for purposes of
visualizing board area, but its thermal performance bears
comparison with the much large SO–8.
This technical note discusses the single–channel
ChipFET 1206A pin–out, package outline, pad patterns,
evaluation board layout and thermal performance.
PIN–OUT
Figure 1 shows the pin–out description and Pin 1
identification for the single–channel 1206A ChipFET
device. The pin–out is similar to the TSOP–6
configuration, with two additional drain pins to enhance
power dissipation and thermal performance. The legs of the
device are very short, again helping to reduce the thermal
path to the external heatsink/pcb and allowing a larger die
to be fitted in the device if necessary.
Figure 1. Single 1206A ChipFET
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
1
8
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 2. This is sufficient for low power dissipation
MOSFET
applications,
but
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern, shown in
Figure 3, improves the thermal area of the drain
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
power
semiconductor
0.0054 sq. in. or 3.51 sq. mm. This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further. An example of
this method is implemented on the Evaluation Board
described in the next section (Figure 4).
Figure 2. Basic Pad Layout
Figure 3. Minimum Recommended Pad Pattern
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
26 mil
28 mil
80 mil
68 mil
28 mil
80 mil
25 mil
26 mil
18 mil
http://onsemi.com
APPLICATION NOTE
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AND8044/D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Single-Channel 1206A ChipFET TM Power MOSFET Recommended Pad Pattern and Thermal Performance
AND8048 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual P-Channel 1.8 V (G-S) MOSFET
AND8048D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual P-Channel 1.8 V (G-S) MOSFET
AND8054 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Designing RC Oscillator Circuits with Low Voltage Operational Amplifiers and Comparators for Precision Sensor Applications
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