參數(shù)資料
型號: AND8048D
廠商: ON SEMICONDUCTOR
英文描述: Dual P-Channel 1.8 V (G-S) MOSFET
中文描述: 雙P溝道1.8伏(GS)的MOSFET的
文件頁數(shù): 1/8頁
文件大小: 47K
代理商: AND8048D
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 0
1
Publication Order Number:
AND8048/D
AND8048/D
SPICE Device Model
NTHD5905T1
Dual P–Channel 1.8 V (G–S) MOSFET
CHARACTERISTICS
P–Channel Vertical DMOS
Macro–Model (Sub–circuit)
Level 3 MOS
Applicable for both Linear and Switch Mode
Applicable over a –55 to 125
°
C Temperature Range
Models Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
DESCRIPTION
The attached SPICE Model describes typical electrical
characteristics of the p–channel vertical DMOS. The
sub–circuit model was extracted and optimized over a 25
°
C
to 125
°
C temperature range under pulse conditions for 0 to
–5 volts gate drives. Saturated output impedance model
accuracy has been maximized for gate biases near
threshold. A novel gate–to–drain feedback capacitor
network is used to model gate charge characteristics while
avoiding convergence problems of switched C
gd
model.
Model parameter values are optimized to provide a best fit
to measure electrical data and are not intended as an exact
physical description of a device.
Figure 1. Model Sub–circuit
R
M
1
2
3
4
G
S
D
DB
C
GS
M
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
http://onsemi.com
APPLICATION NOTE
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