
AN80xx/AN80xxM Series
5
SFF00007CEB
I
Electrical Characteristics at T
a
=
25
°
C (continued)
AN8007, AN8007M (7V type)
AN8008, AN8008M (8V type)
AN8085, AN8085M (8.5V type)
V
O
V
REG
IN
mV
mV
mV
REG
L
V
DIF(min)
V
V
mA
I
Bias
RR
dB
μ
V
V
no
mV/
°
C
V
O
/T
a
7.28
70
7
T
j
=
25
°
C
V
I
=
7.5 to 13V, T
j
=
25
°
C
I
O
=
1 to 40mA, T
j
=
25
°
C
I
O
=
1 to 50mA, T
j
=
25
°
C
50
60
0.07
V
I
=
6.8V, I
O
=
20mA, T
j
=
25
°
C
V
I
=
6.8V, I
O
=
50mA, T
j
=
25
°
C
I
O
=
0mA, T
j
=
25
°
C
V
I
=
8 to 10V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
=
30 to
+
125
°
C
0.7
0.35
0.2
0.3
1.3
6.72
50
0.13
6.5
14
31
120
62
Parameter
Symbol
Conditions
Min
Typ
Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Note 1) The specified condition T
j
=
25
°
C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
8V, I
O
=
20mA and C
O
=
10
μ
F.
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Unit
V
O
V
REG
IN
mV
mV
mV
REG
L
V
DIF(min)
V
V
mA
I
Bias
RR
dB
μ
V
V
no
mV/
°
C
V
O
/T
a
8.32
80
8
T
j
=
25
°
C
V
I
=
8.5 to 14V, T
j
=
25
°
C
I
O
=
1 to 40mA, T
j
=
25
°
C
I
O
=
1 to 50mA, T
j
=
25
°
C
55
65
0.07
V
I
=
7.8V, I
O
=
20mA, T
j
=
25
°
C
V
I
=
7.8V, I
O
=
50mA, T
j
=
25
°
C
I
O
=
0mA, T
j
=
25
°
C
V
I
=
9 to 11V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
=
30 to
+
125
°
C
0.7
0.4
0.2
0.3
1.3
7.68
49
0.14
7.5
15
34
135
61
Parameter
Symbol
Conditions
Min
Typ
Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Note 1) The specified condition T
j
=
25
°
C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
9V, I
O
=
20mA and C
O
=
10
μ
F.
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Unit
V
O
V
REG
IN
mV
mV
mV
REG
L
V
DIF(min)
V
V
mA
I
Bias
RR
dB
μ
V
V
no
mV/
°
C
V
O
/T
a
8.84
90
8.50
8.3
16
36
T
j
=
25
°
C
V
I
=
9 to 14.5V, T
j
=
25
°
C
I
O
=
1 to 40mA, T
j
=
25
°
C
I
O
=
1 to 50mA, T
j
=
25
°
C
60
70
0.07
V
I
=
8.3V, I
O
=
20mA, T
j
=
25
°
C
V
I
=
8.3V, I
O
=
50mA, T
j
=
25
°
C
I
O
=
0mA, T
j
=
25
°
C
V
I
=
9.5 to 11.5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
=
30 to
+
125
°
C
0.8
0.43
0.2
0.3
1.4
8.16
48
0.14
140
60
Parameter
Symbol
Conditions
Min
Typ
Max
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Note 1) The specified condition T
j
=
25
°
C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
9.5V, I
O
=
20mA and C
O
=
10
μ
F.
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Unit