
AN709
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4
Document Number: 70582
15-Jun-00
Figure 4.
Short Circuit Protection
S
1
V
DD
Short
Circuit
Detect
V+ Transition Window
(300 ns)
GND Transition Window
(200 ns)
IN
V+
Window
GND
Window
S
1
300 ns
200 ns
–
+
The FAULT output goes high whenever the Si9976DY detects
an output short circuit or a V
DD
undervoltage condition. The
detection of the short circuit inhibits operation and sets a fault
latch which is cleared by a rising edge on the enable line, EN.
The V
DD
undervoltage condition inhibits operation and
indicates a fault but is nonlatching.
EN
IN
Condition
FAULT
Output
G1
Out
G2
Out
1
0
Normal Operation
0
Low
High
1
1
Normal Operation
0
High
Low
0
X
Disabled
X
Low
Low
1
0
Load Shorted to V+
1
Low
Low
1
1
Load Shorted to Ground
1
Low
Low
1
1
Undervoltage on C
BOOT
Undervoltage on C
BOOT
Undervoltage on V
DD
0
Low
Low
1
0
0
Low
High
X
X
1
Low
Low
The system-logic supply voltage of 4.5 to 16.5 V can be applied
to V
CC
to facilitate interfacing of the FAULT output to the user’s
system. If V
CC
is not supplied, there will be no signal on the
FAULT output. However, the fault protection circuitry will
continue to function as described.
Anti-Phase Control
The Si9976 was designed to be used in an anti-phase control
strategy. This approach is unique in that the PWM signal
controls both speed and direction with duty cycle alone. Zero
to 50% duty cycle defines zero to full speed in one direction,
50% duty cycle is zero speed, and 50% to 100% duty cycle
defines zero to full speed in the opposite direction. This
approach ensures that the bootstrap capacitor is always
charged, since the H-bridge is continuously switching.
The basic hook-up of an anti-phase H-bridge is very simple.
One half-bridge is driven directly with the PWM signal, and the
other half-bridge is driven with the inverse of the PWM signal
(see Figure 5).
Dual
LITTLE
FOOT
MOSFET
Dual
LITTLE
FOOT
MOSFET
Si9976
Out
A
Out
B
Si9976
Figure 5
. Anti-Phase Control
IN
IN
Sign-Magnitude Control
As a secondary function, the Si9976 can be used in
sign-magnitude controls. In this approach, direction of rotation
is determined by the diagonal pair of MOSFETs that are turned
on, and speed is controlled by pulse width modulation of the
active diagonal pair.
The logic required to control the H-bridge is more complex due
to the need to steer the pulse width modulation signal to the
active MOSFET pair. The circuit in Figure 7a applies the PWM
signal only to the low-side active MOSFET.