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| 型號(hào)： | AN5505 |
| 英文描述： | Parallel operation of Dynex IGBT modules |
| 中文描述： | 并行操作Dynex IGBT模塊 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | AN5505 |
1/5
AN5505 Application Note
www.dynexsemi.com
AN5505
Parallel Operation of Dynex IGBT Modules
Application Note
AN5505-1.3 July 2002
Replaces October 2001, version AN5505-1.2
Fig. 1 IGBT module output characteristics
INTRODUCTION
IGBT modules can be connected in parallel to create a switch
with a higher current rating. However, successful paralleling of
IGBT modules requires some care. Depending on the application
the system designer has to consider a number of issues to
ensure that the system is reliable. These issues include the
module characteristics, gate drive circuitry and circuit layout.
The first step is to determine the optimum number of modules to
be connected in parallel to obtain the required current rating for
the system. Any solution must ensure that the safe operating
area of the individual modules is not exceeded. Due to variations
in module characteristics and circuit layout it cannot be assumed
that the parallel connection of N modules each with a current
rating of R amps will have a combined current rating of NR amps.
For this reason it is necessary to derate the modules. This
application note explains the theory behind derating with some
examples and charts. The derating process can be applied to the
entire range of Dynex IGBT modules. This note covers the static
(conduction) and dynamic (switching) behaviour of parallel IGBT
modules taking into consideration device characteristics only.
STATIC SHARING OF IGBT MODULES
CONNECTED IN PARALLEL
When two or more IGBT modules are connected in parallel a
current imbalance occurs due to the difference in the dynamic
and static characteristics of the individual IGBT modules. In a
steady state condition it is principally the difference in output
characteristics which causes the current to divide unequally
between the modules. This is illustrated in figure 1, which shows
that the device having the lower V
CE(sat)
(Q1) carries the largest
portion of the total current.
Note that in the static situation the total circuit inductance
including the load also influences the dc current sharing but the
following analysis assumes that differences in each arm are
negligible.
WHAT IS THE STATIC (DC CURRENT)
DERATING FACTOR FOR PARALLEL
CONNECTED IGBT MODULES
If two modules of the same type but with different V
characteristics are connected in parallel the combined current
rating is not twice the nominal current rating of the module (this
assumes the current in neither module exceeds the nominal
current rating). The reduction in effective current capability is
known as the current derating factor. This is defined as:
[1]
Where,
δ
= the derating factor,
I
T
= total current sustainable by the parallel combination of
modules,
I
M
= maximum allowable current for a single module operating
alone (dc current rating),
n
p
=number of modules in parallel.
M
p
T
I
n
I
x
=
1
δ
I
C1
I
C1
I
C2
I
C2
I
C
V
CE(Sat)
T
j
= 25C
V
02
V
01
Q1
Q1
Q2
Q2
V1
V2
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