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| 型號(hào)： | AN5177 |
| 英文描述： | Improve gate drive for GTO series connections |
| 中文描述： | 改善GTO的系列連接?xùn)艠O驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | AN5177 |
4/5
www.dynexsemi.com
AN5177 Application Note
Fig. 6 Max. permissible turn-off current vs
snubber capacitance
Fig. 5 Turn-off energy vs rate of rise of reverse
gate current
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
10
20
30
40
50
60
Rate of rise of reverse gate current, dI
GQ
/dt - (A/
μ
s)
T
O
Conditions:
T
j
= 115
C, R
= 10
,
I
T
= 800A, C
S
= 2
μ
F
V
D
= 4500V
V
D
= 3000V
V
D
= 1500V
0
2.0
0.5
Snubber capacitance, Cs - (
μ
F)
1.0
1.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
M
T
Conditions:
V
DM
= 4300V, T
j
= 100
C
–
dI
GQ
/dt = 220A/
μ
s
–
dI
GQ
/dt = 20A/
μ
s
0
2000
500
1000
1500
On-state current, I
T
- (A)
0
2
4
6
8
10
12
14
16
18
G
g
μ
s
Conditions:
T
j
= 100
C for Cs = 0.1 to 2
μ
F
–
dI
GQ
/dt = 220A/
μ
s
–
dI
GQ
/dt = 20A/
μ
s
Fig. 7 Gate storgae time vs on-state current
increases in dI
/dt will have much less effect in further
reducing storage time.
4. The reduction in gate turn-off charge Q
is less marked,
typically 40% for a change of dIgt/dt from 40 to 250A/
μ
s. The
consequence of this is that the power output requirement of
the gate drive unit is reduced by 40%. Again for further
increases in dI
GT
/dt the law of diminishing returns applies.
CONCLUSIONS
Using gate drive circuits with faster rates of rise of gate turn-off
current results in higher turn-off current rating, Itcm. Another
benefit is the reduction in storage time resulting in smaller
sharing capacitors for series connected GTOs. The turn-off
power requirements of the gate drive are less for a GTO
operating with high rates of rise of turn-off current.
The performance improvements described have been achieved
using a relatively low cost gate drive and offer a very cost
effective alternative to the IGCT in many applications.
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