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| 型號(hào)： | AN211A |
| 廠商： | Motorola, Inc. |
| 英文描述： | FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE |
| 中文描述： | FIFELD場(chǎng)效應(yīng)晶體管理論與實(shí)踐 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 340K |
| 代理商： | AN211A |
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For More Information On This Product,
Go to: www.freescale.com
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Figure 8. Channel Depletion Phenomenon.
Application of Negative Gate Voltage Causes
Redistribution of Minority Carriers in Diffused Channel
and Reduces Effective Channel Thickness. This Results
in Increased Channel Resistance.
ELECTRICAL CHARACTERISTICS
Because the basic mode of operation for field-effect
devices differs greatly from that of conventional junction
transistors, the terminology and specifications are
necessarily different. An understanding of FET terminology
and characteristics are necessary to evaluate their
comparative merits from data-sheet specifications.
Static Characteristics
Static characteristics define the operation of an active
device under the influence of applied dc operating conditions.
Of primary interest are those specifications that indicate the
effect of a control signal on the output current. The V
GS
–
I
D
transfer characteristics curves are illustrated in Figure 9
for the three types of FETs. Figure 10 lists the data-sheet
specifications normally employed to describe these curves,
as well as the test circuits that yield the indicated
specifications.
Of additional interest is the special case of
tetrode-connected devices in which the two gates are
separately accessible for the application of a control signal.
The pertinent specifications for a junction tetrode are those
which define drain-current cutoff when one of the gates is
connected to the source and the bias voltage is applied to
the second gate. These are usually specified as V
G1S(off)
,
Gate 1 — source cutoff voltage (with Gate 2 connected to
source), and V
G2S(off)
, Gate 2 — source cutoff voltage (with
Gate 1 connected to source). The gate voltage required for
drain current cutoff with one of the gates connected to the
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Figure 9. Transfer Characteristics and Associated Scope Traces for the Three FET Types
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