參數(shù)資料
型號(hào): AN10145
廠商: NXP Semiconductors N.V.
英文描述: Bi-directional low voltage translators
中文描述: 雙向低電壓轉(zhuǎn)換器
文件頁(yè)數(shù): 11/24頁(yè)
文件大?。?/td> 325K
代理商: AN10145
11
-2.2E-02
-2.0E-02
-1.8E-02
-1.6E-02
-1.4E-02
-1.2E-02
-1.0E-02
-8.0E-03
-6.0E-03
-4.0E-03
-2.0E-03
0.0E+00
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
VSn (V)
VSref = 2.5v
I
25 deg C
85 deg C
-40 deg C
VDDref = 5.0v
VDDpass = 3.3v
RDn = 150 ohms
RDref = 200k
Figure 13. V-I Electrical Characteristics at V
SREF
= 2.5 Volt and V
DDREF
= 5.0 Volt
Figures 11, 12 and 13 show the SREF at 2.5 V with V
DDREF
voltages of 3.3 V, 4.0 V, and 5.0 V respectively. Note that
when V
DDREF
is 3.3 V, with only 0.8 V between V
DDREF
and the SREF voltage, the cold temperature curve turns off
before the source voltage reaches the SREF voltage. With V
DDREF
voltages of 4.0 V and 5.0 V, the behavior returns to
normal where the turn off point is the SREF voltage, independent of temperature. The same pass transistor at hot
temperatures has a higher on resistance so it starts to shut off sooner as the source voltage approaches the SREF voltage.
CBT Like Electrical characteristics
CBT like characteristics are tested using a setup as shown in Figure 14
.
Figure 14 – CBT like Test Set Up
Figure 15 shows typical pass transistor on resistance (R
ON
) as a function of source voltage with the gate at 5 V and
I
source
= 64 mA, Figure 16 shows R
ON
with I
source
= 15 mA. As can be clearly seen in these figures, the R
ON
changes only
slightly as long as the source voltage is less than the gate to source voltage necessary to conduct an Idsat equal to the
current source current (64 mA for Figure 15 and 15 mA for Figure 16). The R
ON
increases rapidly as the transistor is
unable to conduct the high current. CBT functions are generally used with dynamic currents rather than static currents.
m
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