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參數(shù)資料
| 型號(hào)： | AMPLIFIER |
| 英文描述： | GaAs MMIC Power Amplifier，2 W 14.014.5 GHz |
| 中文描述： | 砷化鎵微波單片集成電路功率放大器，2瓦14.014.5千兆赫 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 39K |
| 代理商： | AMPLIFIER |
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
Typical Bias Configuration
3,4,7
Absolute Maximum Ratings
1,2,3,4
Parameter
V
DD
V
GG
Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
I
ds
1. Operation of this device outside any of these limits may cause
permanent damage.
2. Case Temperature (T
) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (V
GG
),
followed by connection +9 volts to pin 6 (V
). Note sequence.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the
ouput port is a short circuit.
7. For optimum IP
performance, the V
DD
bypass capacitors should
be placed within 0.5 inches of pin 6.
Absolute Maximum
12 Volts
-10 Volts
13.2 W
+23 dBm
150°C
-65°C to +150°C
2100 mA
V
det
μ
F
μ
F
AM42-0007
μ
F
3.3
0.01
0.01
10 K
3
IN
OUT
8
7
6
V
DD
V
GG
GND
1,2,5,9,10
4
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
GND
GND
IN
V
GG
GND
V
DD
V
det
OUT
GND
GND
Description
DC and RF Ground
DC and RF Ground
RF Input
Gate Supply
DC and RF Ground
Voltage Drain Supply
Output Power Detector
RF Output
DC and RF Ground
DC and RF Ground
Pin Configuration
2
GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz
AM42-0007
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