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參數(shù)資料
| 型號： | AMPLIFIER |
| 英文描述： | GaAs MMIC Power Amplifier，2 W 14.014.5 GHz |
| 中文描述： | 砷化鎵微波單片集成電路功率放大器，2瓦14.014.5千兆赫 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 39K |
| 代理商： | AMPLIFIER |
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 4.0
Ordering Information
Part Number
AM42-0007
Package
Ceramic Bolt Down Package
Electrical Specifications:
T
C
= +25°C, VDD = +9V, VGG = -5.0V, Z
0
= 50
Parameter
Abbv.
Linear Gain
G
L
Input VSWR
VSWR
IN
Output VSWR
VSWR
OU
,
=
Frequency = 14.0-14.5 GHz
Min.
19
—
—
Test Conditions
P
IN
≤
0 dBm
P
IN
≤
0 dBm
P
IN
≤
0 dBm
Units
dB
—
—
Typ.
22
2.5:1
2.7:1
Max.
—
2.7:1
—
T
Saturated Output Power
Output Power @
P
SAT
P
1dB
P
IN
=
+14 dBm
—
dBm
dBm
—
31
33
32
—
—
Output IP
3
Power Added Efficiency
Bias Currents
IP
3
PAE
I
GG
(Refer to Note 1)
P
IN
=
+14 dBm
P
IN
=
+14 dBm
dBm
%
mA
—
—
41
22
18
—
—
25
Thermal Resistance
Detector Output Voltage
IP
3
is measured with two +24 dBm output tones @ 1 MHz spacing.
θ
JC
V
det
25°C Heat Sink
R
L
=10K
, P
OUT
=+31dBm
°C/W
V
—
—
9.5
+3.5
—
—
CR-15
Features
High Linear Gain: 22 dB Typ.
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 22% Typ.
High P
1dB
: 32 dBm Typ.
50
=
Input/Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0007 is a three-stage MMIC linear power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0007 employs a fully matched chip with internally
decoupled Gate and Drain bias networks and an ouput power
detector. The AM42-0007 is designed to be operated from a
constant voltage Drain supply.
The AM42-0007 is designed for use as an output stage or a
driver, in applications for VSAT systems. This design is fully
monolithic and requires a minimum of external components.
M/A-COM’s AM42-0007 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full
passivation for increased performance and reliability. This
product is 100% RF tested to ensure compliance to performance
specifications.
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
AM42-0007
GaAs MMIC VSAT Power Amplifier 2.0W
14.0 - 14.5 GHz
CERAMIC
BASE PLATE
4X .06 X 45°
CHAMFER
6
5
4
3
2
1
7
8
9
10
.010 SQ.
ORIENTATION TAB
2X o .096 THRU
o.004 M
A B C
.090
MAX
.040
.33
.005
± .002
.030
.318
± .010
.328
± .010
.050 MIN.
10
X
.530
.70
.159
.010
± .003
10
X
.100
4X
.115
± .010
.050
4X
.085
- C -
- B -
- A -
1
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