
AMP04
REV. A
–5–
Parameter
Symbol
Conditions
Limit
Units
G = 1000
4.0 V
≤
V
S
≤
12 V
G = 1
G = 10
G = 100
G = 1000
80
dB min
Power Supply Rejection
PSRR
85
95
95
95
dB min
dB min
dB min
dB min
GAIN (G = 100 K/R
GAIN
)
Gain Equation Accuracy
G = 1 to 100
0.75
% max
OUTPUT
Output Voltage Swing High
Output Voltage Swing Low
V
OH
V
OL
R
L
= 2 k
R
L
= 2 k
4.0
2.5
V min
mV max
POWER SUPPLY
Supply Current
I
SY
V
S
=
±
15
900
700
μ
A max
μ
A max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Common-Mode Input Voltage
2
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . .36 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . .–65
°
C to +175
°
C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
Operating Temperature Range
AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . .–40
°
C to +85
°
C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . .–65
°
C to +175
°
C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65
°
C to +150
°
C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300
°
C
. . . . . . . . . . . . . . . . . .
±
18 V
Package Type
θ
JA3
θ
JC
Units
8-Pin Cerdip (Z)
8-Pin Plastic DIP (P)
8-Pin SOIC (S)
148
103
158
16
43
43
°
C/W
°
C/W
°
C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than
±
18 V, the absolute maximum input voltage is
equal to the supply voltage.
3
θ
is
s
pecified for the worst case conditions, i.e.,
θ
JA
is specified for device in
socket for cerdip, P-DIP, and LCC packages;
θ
JA
is specified for device
soldered in circuit board for SOIC package.
ORDERING GUIDE
Temperature
Range
V
OS
@ +5 V
T
A
= +25
8
C
Package
Description
Package
Option
Model
AMP04EP
AMP04ES
AMP04FP
AMP04FS
AMP04FS-REEL
AMP04FS-REEL7
AMP04GBC
XIND
XIND
XIND
XIND
XIND
XIND
+25
°
C
150
μ
V
150
μ
V
300
μ
V
300
μ
V
150
μ
V
150
μ
V
300
μ
V
Plastic DIP
SOIC
Plastic DIP
SOIC
SOIC
SOIC
N-8
SO-8
N-8
SO-8
SO-8
SO-8
DICE CHARACTERISTICS
AMP04 Die Size 0.075
×
0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.