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| 型號(hào)： | AMIS42673ICAG1RG |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | TRANSCEIVER CAN HS 3.3V 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | 收發(fā)器 |
| 驅(qū)動(dòng)器/接收器數(shù)： | 1/1 |
| 規(guī)程： | CAN |
| 電源電壓： | 4.75 V ~ 5.25 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 產(chǎn)品目錄頁(yè)面： | 1115 (CN2011-ZH PDF) |
| 其它名稱： | 766-1008-6 |
AMIS42673
http://onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
Supply Voltage
0.3
+7
V
V33
I/O Interface Voltage
0.3
+7
V
VCANH
DC Voltage at Pin CANH
0 < VCC < 5.25 V; No Time Limit
45
+45
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V; No Time Limit
45
+45
V
VTxD
DC Voltage at Pin TxD
0.3
VCC + 0.3
V
VRxD
DC Voltage at Pin RxD
0.3
VCC + 0.3
V
VREF
DC Voltage at Pin VREF
0.3
VCC + 0.3
V
Vtran(CANH)
Transient Voltage at Pin CANH
Note 2
150
+150
V
Vtran(CANL)
Transient Voltage at Pin CANL
Note 2
150
+150
V
Vtran(VREF)
Transient Voltage at Pin VREF
Note 2
150
+150
V
Vesd(CANL/
CANH)
Electrostatic Discharge Voltage at
CANH and CANL Pin
Note 4
Note 6
8
500
+8
+500
kV
V
Vesd
Electrostatic Discharge Voltage at All
Other Pins
Note 4
Note 6
4
250
+ 4
+250
kV
V
Latchup
Static Latchup at All Pins
Note 5
100
mA
Tstg
Storage Temperature
55
+155
°C
TA
Ambient Temperature
40
+125
°C
TJ
Maximum Junction Temperature
40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a, and 3b (see Figure 4).
3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4kV.
5. Static latchup immunity: static latchup protection level when tested according to EIA/JESD78.
6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.31993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
Rth(vja)
Thermal Resistance from JunctiontoAmbient in
SO8 Package
In Free Air
145
k/W
Rth(vjs)
Thermal Resistance from JunctiontoSubstrate of
Bare Die
In Free Air
45
k/W
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