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參數(shù)資料
| 型號： | AMIS-734512 |
| 英文描述： | 25レm-pitch Wide Aperture Spectroscopic Photodiode Arrays |
| 中文描述： | 25レ米間距寬孔徑光譜光電二極管陣列 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 191K |
| 代理商： | AMIS-734512 |
AMIS-734256, AMIS-734512, AMIS-734024
25μm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Data Sheet
9.0 Recommended Operating Conditions
Table 3
lists the recommended operating conditions.
Table 3: Recommended Operating Conditions at 25
°
C
Parameters
Power supply
Input clock pulses high level
(1)
Input clock pulse low level
Video charge output external bias
Clock frequency
Symbol
VDD
Vih
Vil
Vbias
Fclk
Min.
4.5
Typ.
5.0
VDD
0.0
Max.
5.5
VDD
0.8
VDD
1.0
Units
Volts
Volts
Volts
Volts
MHz
VDD – 0.8
0.0
VDD – 0.5
0.26 (734256)
0.52 (734512)
1.03 (734024)
VDD – 0.5
0.1
Integration time
(2)
Tint
11000 (w/ cap)
ms
Notes:
(1)
(2)
Applies to all control-clock inputs.
Integration time is specified at room temperature such that the maximum dark current charge build up in each pixel is less than 10 percent of the minimum
saturation charge. Accordingly, it may be as long as 11 seconds at room temperature with the added capacitors. Longer integration times may be achieved by
cooling the device. An appropriate clock frequency must be chosen so that the shift register completes its operation within the desired integration time.
10.0 Electro-Optical Characteristics
Table 4 lists the electro-optical characteristics.
Table 4: Electro-Optical Characteristics at 25
°
C
Parameters
Center-to-center spacing
Aperture width
Pixel area
Fill factor
(1)
Quantum efficiency
(1)(2)
Responsivity
Non-uniformity of response
(3)
Saturation exposure
(2)
Symbol
A
FF
QE
R
Min.
Typ.
25
2500
6.25 x 10
-4
72
70
1.5 x 10
-4
2
430 (w/ cap)
170 (w/o cap)
65 (w/cap)
25 (w/o cap)
0.2
600
180 - 1000
Max.
Units
μm
μm
cm
2
%
%
C/J/cm
2
+/-%
nJ/cm
2
pC
pA
nm
nm
Esat
370 (w/cap)
130 (w/o cap)
55 (w/cap)
20 (w/o cap)
Saturation charge
(4)
Average dark current
(5)
Spectral response peak
Spectral response range
(6)
Notes:
(1)
Fill factor, quantum efficiency and responsivity are related by the equation R = (qel/hc).QE.FF.A, where qe is the charge of an electron and hc/l is the energy of a
photon at a given wavelength. Responsivity is therefore given per pixel.
(2)
At wavelength of 575nm (Yellow-Green) and with no window.
(3)
Measured at 50 percent Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.
(4)
Saturation charge specified for a video output bias of 4.5V.
(5)
Max dark leakage ￡ 1.5 x average dark leakage measured with an integration period of 500ms at 25
°
C.
(6)
From 250-1000nm, responsivity 3 20 percent of its peak value.
Qsat
λ
7
AMI Semiconductor
– Aug. 06, M-20603-001
www.amis.com
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