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| 型號(hào)： | AMIS-734512 |
| 英文描述： | 25レm-pitch Wide Aperture Spectroscopic Photodiode Arrays |
| 中文描述： | 25レ米間距寬孔徑光譜光電二極管陣列 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 191K |
| 代理商： | AMIS-734512 |
AMIS-734256, AMIS-734512, AMIS-734024
25μm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Data Sheet
Figure 5: Simplified Circuit Diagram of an HSN Photodiode Array
The diagram in Figure 5 does not include the capacitor bank and the anti-blooming circuitry.
7.0 I/O Pins
Besides the VSS and VDD supply pins, there are nine functionally active I/O pins. Only two clocks, CLK and START, are required for
controlling the timing of the sensor's video readout. One additional digital input, ADDCAP controls the bank of capacitors as described
in the Section 6.0. The digital output, EOS, marks the end of the line-scan. The charge output pin, QOUT, is typically connected to a
charge-integrating amplifier, which is biased to Vbias (see Section 8.0). For normal anti-blooming operation, the ABG requires a 0.1μF
capacitor connected to VSS and the ABD is also biased to Vbias. Each temperature diode is operated with a small constant current,
which forward biases its PN junction. By measuring the forward-bias voltage, one can track the silicon die temperature. The
temperature diodes may be disabled by connecting their anodes to VSS. These I/Os are listed with their acronym designators and
functional descriptions in Table 1.
Table 1: Symbols and Functions and I/O Pins
Symbol
Function and Description
VSS
Ground
VDD
+5.0V
START
Start pulse: input to start the line scan
CLK
Clock pulse: input to clock the shift register
ADDCAP
Add capacitors: input that selects the bank of capacitors to increase charge capacity
EOS
End of scan: output from the shift register to indicate the completion of one line scan
QOUT
Video charge output: output from the photodiodes pixels
ABG
Anti-blooming gate: self-biased gate for setting anti-blooming level. Requires 0.1-μF connected to VSS
ABD
Anti-blooming drain: bias for anti-blooming drain, set to Vbias
TD1
Temperature Diode 1: anode of temperature Diode 1
TD2
Temperature Diode 2: anode of temperature Diode 2
NC
No connection
5
AMI Semiconductor
– Aug. 06, M-20603-001
www.amis.com
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