參數(shù)資料
型號(hào): AMIS-42700
元件分類: CAN
英文描述: Dual High-Speed CAN Transceiver
中文描述: 雙高速CAN收發(fā)器
文件頁(yè)數(shù): 9/16頁(yè)
文件大?。?/td> 308K
代理商: AMIS-42700
AMIS-42700 Dual High-Speed CAN Transceiver
8.0 Electrical Characteristics
Preimnary Data Shee
8.1 Definitions
All voltages are referenced to GND. Positive currents flow into the IC. Sinking current means that the current is flowing into the
pin. Sourcing current means that the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
Parameter
V
CC
Supply voltage
V
CANH
DC voltage at pin CANH
V
CANL
DC voltage at pin CANL
V
TxD
DC voltage at pin TxD
V
RxD
DC voltage at pin RxD
V
S
DC voltage at pin S
V
REF
DC voltage at pin V
REF
V
tran(CANH)
Transient voltage at pin CANH
V
tran(CANL)
Transient voltage at pin CANL
V
tran(VSPLIT)
Transient voltage at pin Vsplit
Conditions
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
Note 1
Note 1
Note 1
Note 2
Note 4
Note 2
Note 4
Note 3
Min.
-0.3
-45
-45
-0.3
-0.3
-0.3
-0.3
-150
-150
-150
-8
-500
-2
-250
-55
-40
-40
Max.
+7
+45
+45
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
+150
+150
+150
+8
+500
+2
+250
100
+155
+125
+150
Unit
V
V
V
V
V
V
V
V
V
V
kV
V
kV
V
mA
°C
°C
°C
V
esd(CANL/CANH)
ESD voltage at CANH and CANL pin
V
esd
ESD voltage at all other pins
Latch-up
T
stg
T
amb
T
junc
Notes:
1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model (HBM) ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is
±
2 kV.
3) Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Symbol
R
th(vj-a)
R
th(vj-s
)
Parameter
Thermal resistance from junction to ambient in SO8 package
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
145
45
Unit
K/W
K/W
AMI Semiconductor
– Rev. 1.4, May 05 - Preliminary
www.amis.com
9
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