參數(shù)資料
型號: AM80912-015
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, FM-2
文件頁數(shù): 1/1頁
文件大?。?/td> 14K
代理商: AM80912-015
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
55
V
BVCER
IC = 10 mA
RBE = 10
55
V
BVEBO
IE = 1 mA
3.5
V
ICES
VCE = 28 V
VBE = 0 V
2.0
mA
hFE
VCE = 5.0 V
IC = 500 mA
15
150
---
PG
ηηηη
C
VCC = 28 V
POUT = 15 W
f = 960 - 1215 MHz
PIN = 2.3 W
8.1
45
8.9
49
dB
%
Pulse format: 6.4 sec on 6.6 sec off, repeat for 3.3 ms, Then off for 4.5125 ms
Duty Cycle: Burst 49.2%, overall 20.8%
NPN SILICON RF POWER TRANSISTOR
AM80912-015
DESCRIPTION:
The
ASI AM80912-015 is designed for
avionics applications, including JTIDS. It
is housed in a Hermetic Package.
FEATURES:
Internal Input/Output Matching Network
P
G = 8.1 dB at 15 W/ 1215 MHz
Omnigold Metalization System
28 V Operations
Common Base configuration
MAXIMUM RATINGS
IC
1.8 A
VCC
32 V
PDISS
50 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
3.0 °C/W
PACKAGE STYLE .310 2L FLG
MINIMUM
inches / mm
.100 / 2.54
.286 / 7.26
.306 / 7.77
B
C
D
E
F
G
A
MAXIMUM
.318 / 8.08
.306 / 7.77
inches / mm
H
DIM
K
L
I
J
.552 / 14.02
.300 / 7.62
.572 / 14.53
.320 / 8.13
P
N
M
.118 / 3.00
.003 / 0.08
.131 / 3.33
.006 / 0.15
.790 / 20.07
.810 / 20.57
.072 / 1.83
.148 / 3.76
.120 / 3.05
R
.052 / 1.32
.230 / 5.84
.095 / 2.41
.105 / 2.67
.050 / 1.27
.400 / 10.16
.119 / 3.02
.110 / 2.79
.130 / 3.30
I
G
C
D
F
E
N
H
4x .062 x 45°
R
P
M
L
J
K
2 x B
.040 x 45°
A
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