參數(shù)資料
型號(hào): AM82731-001
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 INCH, FM-2
文件頁數(shù): 1/1頁
文件大小: 59K
代理商: AM82731-001
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 1.0 mA
RBE = 10
45
V
ICES
VCE = 30 V
0.5
mA
BVEBO
IE = 1.0 mA
3.5
V
hFE
VCE = 5 V
IC = 100 mA
10
---
POUT
η
C
PG
VCE = 30 V
PIN = 0.3 W
f = 2.7 to 3.1 GHz
1.0
27
5.2
1.1
30
5.6
W
%
dB
Note:
Pulse Width = 100
μS
Duty Cycle = 10%
NPN RF POWER TRANSISTOR
AM82731-001
DESCRIPTION:
The AM82731-001 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
IC
0.45 A
VCC
34 V
PDISS
11.5 W @ TC = 25 °C
TJ
-65 °C to+250 °C
TSTG
-65 °C to+200 °C
θ
JC
13.0 °C/W
PACKAGE STYLE 400 2NL FLG
MINIMUM
inches / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / mm
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C
E
N
D
M
G
4x .062 x 45°
P
L
K
I
J
2X B
.025 x 45°
A
N
M
.118 / 3.00
.131 / 3.33
.020 / 0.51
.030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03
.415 / 10.54
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
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