參數(shù)資料
型號(hào): AM50DL9608G
英文描述: 90NS, SOIC, IND TEMP(EEPROM)
中文描述: 64兆(4米× 16位)和32Mb(2米× 16位)和8兆(為512k × 16位),偽靜態(tài)存儲(chǔ)器(初步)
文件頁數(shù): 5/70頁
文件大?。?/td> 1042K
代理商: AM50DL9608G
4
Am50DL9608G
May 19, 2003
P R E L I M I N A R Y
UB#s and LB#s Control................................................................... 64
Flash Erase And Programming Performance . . .65
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 65
BGA Package Capacitance . . . . . . . . . . . . . . . . 65
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . 65
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 66
FTA073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm................66
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 67
相關(guān)PDF資料
PDF描述
AM50DL128BG Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM50DL128CG 2 x 64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 64 Mbit (2 M x 16-Bit) Pseudo Static RAM (Preliminary)
AM50DL128CH Am50DL128CH - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM52-0001 1.2 W High Efficiency Power Amplifier 800 - 960 MHz
AM52-0001SMB 1.2 W High Efficiency Power Amplifier 800 - 960 MHz
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