參數(shù)資料
型號： AM50DL9608G
英文描述： 90NS, SOIC, IND TEMP(EEPROM)
中文描述： 64兆（4米× 16位）和32Mb（2米× 16位）和8兆（為512k × 16位），偽靜態(tài)存儲器（初步）
文件頁數(shù)： 3/70頁
文件大?。?/td> 1042K
代理商： AM50DL9608G
2
Am50DL9608G
May 19, 2003
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am50DL9608G consists of two flash memory de-
vices (one 64-Mbit Am29DL640G and one 32-Mbit
Am29DL320G), and one 8 Mbit pseudo SRAM device.
Am29DL640G and Am29DL320G Features
Am29DL640G is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words. The
Am29DL320G is a 32 megabit, 3.0 volt-only flash
memory device, organized as 2,097,152 words. Word
mode data appears on DQ15–DQ0. The device is de-
signed to be programmed in-system with the standard
3.0 volt V
supply, and can also be programmed in
standard EPROM programmers.
The device is available with an access time of 70 or 85
ns and is offered in a 73-ball FBGA package. Standard
control pins—chip enable (CE#fx), write enable
(WE#), and output enable (OE#)—control normal read
and write operations, and avoid bus contention issues.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into
four banks
. Sector addresses are fixed,
system software can be used to form user-defined
bank groups.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can im-
prove overall system performance by allowing a host
system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The Am29DL640G can be organized as both a top
and bottom boot sector configuration.
The Am29DL320G can be organized as either a top or
bottom boot sector configuration. Top boot configura-
tion is shown in the following table.
Bottom boot configuration is shown in the following ta-
ble.
Available on Am29DL640G and Am29DL320G, the
SecSi (Secured Silicon) Sector
is an extra 256
byte sector capable of being permanently locked by
AMD or customers. The Secure Sector
SecSi Indica-
tor Bit
(DQ7) is permanently set to a 1 if the part is
factory
locked
, and set to a 0 if
customer lockable
.
This way, customer lockable parts can never be used
to replace a factory locked part.
Factory locked parts provide several options. The Se-
cure SectorSecSi Sector
may store a secure, random
16 byte ESN (Electronic Serial Number), customer
code (programmed through AMD’s ExpressFlash ser-
vice), or both. Customer Lockable parts may utilize the
Secure SectorSecSi Sector as a one-time program-
mable area.
The AMD
DMS (Data Management Software)
man-
ages data programming, enables EEPROM emulation,
and eases historical sector erase flash limitations. For
more information on DMS or to obtain the software,
contact AMD or an authorized representative.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard
. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby mode
. Power consumption is greatly re-
duced in both modes.
Bank
Megabits
Sector Sizes
Eight 4 Kword,
Fifteen 32 Kword
Forty-eight 32 Kword
Forty-eight 32 Kword
Eight 4 Kword,
Fifteen 32 Kword
Bank 1
8 Mb
Bank 2
Bank 3
24 Mb
24 Mb
Bank 4
8 Mb
Bank
Megabits
Sector Sizes
Eight 4 Kword,
Seven 32 Kword
Twenty-four 32 Kword
Twenty-four 32 Kword
Eight 32 Kword
Bank 1
4 Mb
Bank 2
Bank 3
Bank 4
12 Mb
12 Mb
4 Mb
Bank
Bank 1
Bank 2
Bank 3
Megabits
4 Mb
12 Mb
12 Mb
Sector Sizes
Eight 32 Kword
Twenty-four 32 Kword
Twenty-four 32 Kword
Eight 4 Kword,
Seven 32 Kword
Bank 4
4 Mb
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM50DL9608GB70IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
AM50DL9608GB70IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
AM50DL9608GB75IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
AM50DL9608GB75IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
AM50DL9608GT70IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
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