參數(shù)資料
型號: AM42DL640AH
英文描述: 200NS, TSOP, IND TEMP(EEPROM)
中文描述: 堆疊MCP的閃存和SRAM。 64兆位(x8/x16)3.0電壓的CMOS只。同時運作閃存和16兆位(1Mx16位)靜態(tài)存儲器
文件頁數(shù): 53/60頁
文件大小: 956K
代理商: AM42DL640AH
52
Am42DL16x2D
March 4, 2002
P R E L I M I N A R Y
AC CHARACTERISTICS
Figure 29.
SRAM Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
1. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
2. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
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