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參數(shù)資料
| 型號： | AM42DL16X4D |
| 英文描述： | 150NS, PLCC, IND TEMP(EEPROM) |
| 中文描述： | Am42DL16x4D -堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 5/60頁 |
| 文件大?。?/td> | 956K |
| 代理商： | AM42DL16X4D |
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Am42DL16x2D
March 4, 2002
P R E L I M I N A R Y
Figure 26. Sector/Sector Block Protect and Unprotect
Timing Diagram............................................................................... 48
Alternate CE#f Controlled Erase and Program Operations ....49
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timings................................................................................ 50
SRAM Read Cycle ..................................................................51
Figure 28. SRAM Read Cycle—Address Controlled....................... 51
Figure 29. SRAM Read Cycle......................................................... 52
SRAM Write Cycle ..................................................................53
Figure 30. SRAM Write Cycle—WE# Control................................. 53
Figure 31. SRAM Write Cycle—CE1#s Control.............................. 54
Figure 32. SRAM Write Cycle—UB#s and LB#s Control................ 55
Flash Erase And Programming Performance . 56
Flash Latchup Characteristics. . . . . . . . . . . . . . . 56
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 56
FLASH Data Retention . . . . . . . . . . . . . . . . . . . . . 56
SRAM Data Retention Characteristics . . . . . . . . 57
Figure 33. CE1#s Controlled Data Retention Mode....................... 57
Figure 34. CE2s Controlled Data Retention Mode......................... 57
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 58
FLA069—69-Ball Fine-Pitch Grid Array 8 x 11 mm ...............58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
Revision A (October 24, 2001) ...............................................59
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| AM42DL3224GB25IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL3224GB30IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL3224GB35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL3224GB40IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL3224GB55IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
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