參數(shù)資料
型號: AM42DL1612DB35IT
廠商: Advanced Micro Devices, Inc.
英文描述: Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
中文描述: Am29DL16xD 16兆位(2米× 8位/ 1個M x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體和2兆位(128畝× 16位),靜態(tài)存儲器
文件頁數(shù): 118/128頁
文件大?。?/td> 650K
代理商: AM42DL1612DB35IT
February 6, 2004
Am42DL16x2D
53
AC CHARACTERISTICS
SRAM Write Cycle
Notes:
1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing.
1. t
CW
is measured from CE1#s going low to the end of write.
2. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CE1#s or WE# going high.
3. t
AS
is measured from the address valid to the beginning of write.
4. A write occurs during the overlap (t
WP
) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP
is measured from the beginning of write
to the end of write.
Figure 30.
SRAM Write Cycle—WE# Control
Parameter
Symbol
Description
Speed Options
Unit
70
85
t
WC
Write Cycle Time
Min
70
85
ns
t
Cw
Chip Enable to End of Write
Min
60
70
ns
t
AS
Address Setup Time
Min
0
ns
t
AW
Address Valid to End of Write
Min
60
70
ns
t
BW
UB#s, LB#s to End of Write
Min
60
70
ns
t
WP
Write Pulse Time
Min
50
60
ns
t
WR
Write Recovery Time
Min
0
ns
t
WHZ
Write to Output High-Z
Min
0
ns
Max
20
25
t
DW
Data to Write Time Overlap
Min
30
35
ns
t
DH
Data Hold from Write Time
Min
0
ns
t
OW
End Write to Output Low-Z
Min
5
ns
Address
CE1#s
Data Undefined
UB#s, LB#s
WE#
Data In
Data Out
t
WC
t
CW
(See Note 2)
t
AW
High-Z
High-Z
Data Valid
CE2s
t
CW
(See Note 2)
t
BW
t
WP
(See Note 5)
t
AS
(See Note 4)
t
WR
(See Note 3)
t
WHZ
t
DW
t
DH
t
OW
相關PDF資料
PDF描述
AM42DL1612DB45IS Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB45IT Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB70IS Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB70IT Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB85IS Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
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AM42DL1612DB45IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB45IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB70I 制造商:Spansion 功能描述:COMBO 1MX16/2MX8 FLASH + 128KX16 SRAM 3V/3.3V 69FBGA - Trays
AM42DL1612DB70IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
AM42DL1612DB70IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM