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參數資料
| 型號： | AM41PDS3228DT10IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲器 |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 8 X 11.60 MM, FBGA-73 |
| 文件頁數： | 54/59頁 |
| 文件大?。?/td> | 560K |
| 代理商： | AM41PDS3228DT10IT |
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May 13, 2002
Am41PDS3228D
53
P R E L I M I N A R Y
SRAM AC CHARACTERISTICS
Notes:
1. CE1#s controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. t
CW
is measured from CE1#s going low to the end of write.
3. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CE1#s or WE# going high.
4. t
AS
is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP
) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP
is measured from the beginning of write
to the end of write.
Figure 31.
SRAM Write Cycle—CE1#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
t
WC
CE1#s
CE2s
t
AW
t
AS
(See Note 2 )
t
BW
t
CW
(See Note 3)
t
WR
(See Note 4)
t
WP
(See Note 5)
t
DW
t
DH
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