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| 型號： | AM41PDS3224D |
| 英文描述： | 32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) |
| 中文描述： | 32兆位（2米× 16位）的CMOS電壓1.8只。同時(shí)采取行動，頁面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲器（初步） |
| 文件頁數(shù)： | 52/59頁 |
| 文件大?。?/td> | 1068K |
| 代理商： | AM41PDS3224D |
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May 13, 2002
Am41PDS3224D
51
P R E L I M I N A R Y
SRAM AC CHARACTERISTICS
Figure 29.
SRAM Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
t
RC
CS#1
Address
UB#, LB#
OE#
Data Out
t
OH
t
AA
t
CO1
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
CS2
t
CO2
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| AM42-0002 | 150NS, PLCC, IND TEMP(EEPROM) |
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| AM42-0015 | Microwave/Millimeter Wave Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41PDS3224DB100IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB100IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB10IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB10IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB110IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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