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參數(shù)資料
| 型號： | AM41LV3204MB10IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA69 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69 |
| 文件頁數(shù)： | 61/67頁 |
| 文件大小： | 484K |
| 代理商： | AM41LV3204MB10IT |
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60
Am41LV3204M
June 10, 2003
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Table11 for
further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Word/Byte Program Time (Note 3)
Byte
60
600
μs
Excludes system level
overhead (Note 7)
Word
60
600
μs
Accelerated Single Word/Byte Program Time
(Note 3)
Byte
54
540
μs
Word
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program Time (Note 5)
Per Byte
7.5
38
μs
Per Word
15
75
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Accelerated Write Buffer Program Time
(Note 5)
Per Byte
6.25
33
μs
Per Word
12.5
65
μs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including OE#, and RESET#f)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41LV3204MT10I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41LV3204MT10IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41LV3204MT10IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41LV320MB10IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41LV320MB10IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
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