參數(shù)資料
型號: AM41LV3204MB10IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA69
封裝: 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69
文件頁數(shù): 59/67頁
文件大小: 484K
代理商: AM41LV3204MB10IT
58
Am41LV3204M
June 10, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
Notes:
1. CE1#s controlled.
2. t
CW
is measured from CE1#s going low to the end of write.
3. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CE1#s or WE# going high.
4. t
AS
is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP
) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP
is measured from the beginning of write
to the end of write.
Figure 29.
SRAM Write Cycle—CE1#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
t
WC
CE1#s
CE2s
t
AW
t
AS
(See Note 2 )
t
BW
t
CW
(See Note 3)
t
WR
(See Note 4)
t
WP
(See Note 5)
t
DW
t
DH
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