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參數(shù)資料
| 型號： | AM41DL6408H8H70IS |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | TV 6C 6#20 PIN WALL RECP |
| 中文描述： | 堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 26/66頁 |
| 文件大?。?/td> | 1123K |
| 代理商： | AM41DL6408H8H70IS |
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24
Am41DL6408H
November 24, 2003
A D V A N C E I N F O R M A T I O N
Table 10.
CFI Query Identification String
Table 11.
System Interface String
Table 12.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0003h
Typical timeout per single byte/word write 2
N
μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0017h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
相關PDF資料 |
PDF描述 |
|---|---|
| AM41DL6408H8H70IT | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H71IS | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:6; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| AM41DL6408H8H71IT | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H85IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H85IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM41DL6408H8H70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H71IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H71IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H85IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H85IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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