參數(shù)資料
型號: AM41DL6408G55IT
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同時作業(yè)閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲器
文件頁數(shù): 53/63頁
文件大?。?/td> 573K
代理商: AM41DL6408G55IT
52
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed
JEDEC
Std
Description
70, 71
85
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
85
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
40
45
ns
t
DVEH
t
DS
Data Setup Time
Min
40
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
40
45
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Byte
Typ
5
μs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
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