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| 型號： | AM41DL6408G55IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同時作業(yè)閃存和8兆位（1 M中的x 8-Bit/512畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 25/63頁 |
| 文件大?。?/td> | 573K |
| 代理商： | AM41DL6408G55IT |
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24
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
Table 11.
System Interface String
Table 12.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0017h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41DL6408H | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408H8H70IS | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H70IT | TV 6C 6#20 PIN WALL RECP |
| AM41DL6408H8H71IS | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:6; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| AM41DL6408H8H71IT | TV 6C 6#20 PIN WALL RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41DL6408G70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G70IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G71IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G71IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM41DL6408G85I | 制造商:Spansion 功能描述:COMBO 4MX16/8MX8 FLASH + 512KX16/1MX8 SRAM 3V/3.3V 73FBGA - Trays |
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