參數(shù)資料
型號(hào)： AM30LV0064DJ40
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
中文描述： 64兆位（8米× 8位）的CMOS 3.0伏特，只有UltraNAND閃存技術(shù)
文件頁(yè)數(shù)： 11/41頁(yè)
文件大?。?/td> 1067K
代理商： AM30LV0064DJ40
Am30LV0064D
11
CELL LAYOUT AND ADDRESS ASSIGNMENT
Note:
Device programming is executed on a page basis while erase is performed on a block basis. During read operations, data
is transferred from the Flash array to the internal Data Register on a page basis. Data is then sequentially read from the Data
Register on a Byte basis.
Figure 1. Mass Storage Device Cell Layout
Table 1. Address Assignment
Legend:
Axx = specific address bit, X = don’t care (V
IH
or V
IL
)
Notes:
1. A8 is automatically set “Low” or “High” by the 00h or 01h command.
2. A22 to A13 specifies the Block Address, A12 to A9 specifies the Page Address within a block, and A7 to A0 identifies the
byte address within half a page.
I/O 7
A7
A16
X
I/O 6
A6
A15
X
I/O 5
A5
A14
A22
I/O 4
A4
A13
A21
I/O 3
A3
A12
A20
I/O 2
A2
A11
A19
I/O 1
A1
A10
A18
I/O 0
A0
A9
A17
First Cycle
Second Cycle
Third Cycle
256
16
16,384 Pages
(1,024 Blocks)
Flash Memory
Array
512 + 16 Byte
Data Register
I/O 7
I/O 0
~
16 Pages
(1 Block)
528 Bytes
(1 Page)
256
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM30LV0064DJ40E21 制造商:Advanced Micro Devices 功能描述:
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AM30LV0064DJ40E2IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40F2I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM
AM30LV0064DJ40F2IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
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