參數(shù)資料
型號(hào)： AM29SL160CT-120EC
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 46/50頁
文件大小： 979K
代理商： AM29SL160CT-120EC
46
Am29SL160C
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 2.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 1.8 V 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 12 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 1.8 V one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
2
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
70
s
Byte Programming Time
10
300
μs
Excludes system level
overhead (Note 5)
Word Programming Time
12
360
μs
Accelerated Program Time, Word/Byte
8
240
μs
Chip Programming Time
(Note 3)
Byte Mode
20
160
s
Word Mode
14
120
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11.0 V
Input voltage with respect to V
SS
on all I/O pins
–0.5 V
V
CC
+ 0.5 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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