參數(shù)資料
型號(hào)： Am29PDL128G70
廠商： Spansion Inc.
英文描述： 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
中文描述： 128兆位（8米× 16位/ 4米× 32位），3.0伏的CMOS只，同步讀/寫閃存與VersatileIO控制記憶
文件頁(yè)數(shù)： 66/69頁(yè)
文件大?。?/td> 1181K
代理商： AM29PDL128G70
July 29, 2002
Am29PDL128G
65
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
14
–
17
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
FORTIFIED BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.2
10
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
100
sec
Double Word Program Time
16.6
330
μs
Excludes system level
overhead (Note 5)
Word Program Time
12.6
210
μs
Accelerated Double Word Program Time
14.5
120
μs
Accelerated Word Program Time
10.5
240
μs
Chip Program Time
(Note 3)
Double Word Mode
69.6
208
sec
Word Mode
105.7
317
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–
1.0 V
13 V
Input voltage with respect to V
SS
on all I/O pins
–
1.0 V
V
CC
+ 1.0 V
V
CC
Current
–
100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TBD
TBD
pF
C
OUT
Output Capacitance
V
OUT
= 0
TBD
TBD
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TBD
TBD
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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