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參數(shù)資料
| 型號： | AM29LV800DB-120FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | REVERSE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 80K |
| 代理商： | AM29LV800DB-120FI |
8
Am29LV800B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 147 mils x 293 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 3.74 mm x 7.45 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
μ
m x 100
μ
m
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000
μ
m
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . .
–40
°
C to +85
°
C
MANUFACTURING INFORMATION
Manufacturing. . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot). . . . . . . . . . . . .98925AK
(Bottom Boot). . . . . . . . .98925ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV800BT-90DW5I1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29LV800BT-90DW5C1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29LV800BB-90DW5C1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29LV800BT-120DW5C1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| Am29LV800BB-120DW5C1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800DB-70EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP |
| AM29LV800DB-90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB-90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800DB-90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
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