參數(shù)資料
型號: AM29LV800DB-120FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: REVERSE, MO-142DD, TSOP-48
文件頁數(shù): 2/9頁
文件大?。?/td> 80K
代理商: AM29LV800DB-120FI
2
Am29LV800B Known Good Die
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29LV800B in Known Good Die (KGD) form is
an 8 Mbit, 3.0 volt-only Flash memory. AMD defines
KGD as standard product in die form, tested for func-
tionality and speed. AMD KGD products have the same
reliability and quality as AMD products in packaged
form.
Am29LV800B Features
The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The word-wide data (x16) appears on DQ15–
DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The device requires only a
single 3.0 volt power
supply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. No V
PP
is required for
program or erase operations. The device can also be
programmed in standard EPROM programmers.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the
Embedded
Erase
algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits
. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby
mode
. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29LV800B data sheet, publication
number 21490, for full electrical specifications on the
Am29LV800B in KGD form.
相關(guān)PDF資料
PDF描述
Am29LV800BT-90DW5I1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29LV800BT-90DW5C1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29LV800BB-90DW5C1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29LV800BT-120DW5C1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29LV800BB-120DW5C1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
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參數(shù)描述
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB-90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
AM29LV800DB90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800DB-90EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP