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| 型號： | AM29LV800BT-70WBK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 23/49頁 |
| 文件大?。?/td> | 859K |
| 代理商： | AM29LV800BT-70WBK |
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Am29LV800B
21
Table 1. Am29LV800B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18–A12 uniquely select any sector.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Except when reading array or autoselect data, all bus cycles are write operations.
4.
Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
5.
Address bits A18–A11 are don’t cares for unlock and command cycles, unless PA or SA required.
6.
No unlock or command cycles required when reading array data.
7.
The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status data).
8.
The fourth cycle of the autoselect command sequence is a read cycle.
9.
The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more
information.
10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase operation.
13. The Erase Resume command is valid only during the Erase Suspend mode.
Command
Sequence
( Note 1)
Bus Cycles ( Notes 2-5)
Third
Dat
a
First
Second
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Dat
a
RD
F0
Addr
Dat
a
Addr
Addr
Data
Addr
Dat
a
Addr
Dat
a
Read (Note 6)
Reset (Note 7)
1
1
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
4
AA
55
90
X01
X02
X01
X02
(SA)
X02
22DA
DA
225B
5B
XX00
XX01
00
01
Device ID,
Bottom Boot Block
4
AA
55
90
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
Byte
AAA
555
AAA
(SA)
X04
Program
Word
Byte
Word
Byte
4
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
XXX
XXX
AA
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
55
555
AAA
555
AAA
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
2
2
A0
90
PD
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
B0
30
C
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV800BB-90DP5C | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29LV800B-1 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| AM29LV800DB-120FC | Time-Delay Relay; Contacts:NO; Timing Function:Delay-On-Make; Supply Voltage Max:50V; Supply Voltage Min:18V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes |
| AM29LV800DB-120FD | Time-Delay Relay; Contacts:NO; Time Range:0.1 to 102.4s; Timing Function:Delay-On-Make; Supply Voltage Max:288V; Supply Voltage Min:100V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes |
| AM29LV800DB-120FF | Time-Delay Relay; Time Range:1sec. to 1024 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:288V; Supply Voltage AC, Min:19V; Supply Voltage DC, Max:288V RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP 制造商:Analog Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV800DB-70EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP |
| AM29LV800DB-90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB-90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP |
| AM29LV800DB90EI | 制造商:Advanced Micro Devices 功能描述: |
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