參數(shù)資料
型號(hào): AM29LV800DB-120FC
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: Time-Delay Relay; Contacts:NO; Timing Function:Delay-On-Make; Supply Voltage Max:50V; Supply Voltage Min:18V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes
中文描述: 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: REVERSE, MO-142DD, TSOP-48
文件頁數(shù): 1/9頁
文件大?。?/td> 80K
代理商: AM29LV800DB-120FC
SUPPLEMENT
Publication#
21356
Issue Date:
March 1998
Rev:
B
Amendment/
+1
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 2.7 to 3.6 V for read, program, and erase
operations
— Ideal for battery-powered applications
I
Manufactured on 0.35
μ
m process technology
I
High performance
— 90 or 120 ns access time
I
Low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關(guān)PDF資料
PDF描述
AM29LV800DB-120FD Time-Delay Relay; Contacts:NO; Time Range:0.1 to 102.4s; Timing Function:Delay-On-Make; Supply Voltage Max:288V; Supply Voltage Min:100V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes
AM29LV800DB-120FF Time-Delay Relay; Time Range:1sec. to 1024 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:288V; Supply Voltage AC, Min:19V; Supply Voltage DC, Max:288V RoHS Compliant: Yes
AM29LV800DB-120FI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV800BT-90DW5I1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29LV800BT-90DW5C1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
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