參數(shù)資料
型號: AM29LV64MU101RWHI
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
中文描述: 64兆位(4個M x 16位)的MirrorBit 3.0伏特,只有統(tǒng)一的閃存部門
文件頁數(shù): 56/58頁
文件大?。?/td> 1173K
代理商: AM29LV64MU101RWHI
June 12, 2003
Am29LV640MU
55
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY
Revision A (August 3, 2001)
Initial release as abbreviated Advance Information
data sheet.
Revision A+1 (September 12, 2001)
Global
Changed description of chip-scale package from
63-ball FBGA to 64-ball Fortified BGA.
Ordering Information
Changed package part number designation from WH
to PC.
Physical Dimensions
Added the TS056 and LAA064 packages.
Revision A+2 (October 3, 2001)
Global
Added information for WP# protected devices
(LV640MH/L). Clarified V
CC
and V
IO
ranges.
Connection Diagrams
Changed RFU (reserved for future use) to NC (no con-
nection). Added 63-ball FBGA drawing.
Ordering Information
Added H and L valid combinations for WP# protected
devices. Changed voltage operating range for 90 ns
device.
Revision B (March 19, 2002)
Global
Expanded data sheet to full specification version.
Starting with this revision, the data sheet will only con-
tain specifications for the Am29LV640MU part num-
ber. For Am29LV640MH/L part number specifications,
refer to publication number 26191.
Revision B+1 (April 26, 2002)
Global
Deleted references to word mode.
MirrorBit 64 Mbit Device Family
Deleted Am29LV641MT/B.
Figure 2,
In-System Sector Group
Protect/Unprotect Algorithms
Modified to show A2, A3 address requirements.
Sector Protection/Unprotection
Deleted references to alternate method of sector pro-
tection.
Autoselect Command
Substituted text with ID code table for easier refer-
ence.
Table 10
, Command Definitions
Combined Notes 4 and 5 from Revision B. Corrected
number of cycles indicated for Write-to-Buffer and Au-
toselect Device ID command sequences.
Revision B+2 (August 5, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added t
RH
parameter to table.
Erase and Program Operations
Added t
BUSY
parameter to table.
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
μ
s typical to maximum and added 5
μ
s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μ
s to 5
μ
s and added a maxi-
mum of 20
μ
s.
Revision B+3 (September 10, 2002)
Product Selector Guide
Added Note 2.
Ordering Information
Added Note 1.
Connection Diagram
Deleted A-1 from Pin G7.
Sector Erase Command Sequence
Deleted statement that describes the outcome of when
the Embedded Erase operation is in progress.
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