參數(shù)資料
型號(hào): AM29LV640MU101WHI
廠商: ADVANCED MICRO DEVICES INC
元件分類(lèi): PROM
英文描述: 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
中文描述: 4M X 16 FLASH 3V PROM, 100 ns, PBGA63
封裝: 12 X 11 MM, 0.80 MM PITCH, FBGA-63
文件頁(yè)數(shù): 6/58頁(yè)
文件大小: 1170K
代理商: AM29LV640MU101WHI
June 12, 2003
Am29LV640MU
5
A D V A N C E I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
1. See “AC Characteristics” for full specifications.
2. For the Am29LV640MU device, the last numeric digit in the speed option (e.g. 101, 112, 120) is used for internal purposes
only. Please use OPNs as listed when placing orders.
BLOCK DIAGRAM
RY/BY#
Part Number
Am29LV640MU
Speed
Option
V
CC
= 3.0–3.6
V
90R
(V
IO
=
3.0–3.6 V)
101R
(V
IO
= 2.7–3.6
V)
112R
(V
IO
= 1.65–3.6
V)
120R
(V
IO
= 1.65–3.6
V)
V
CC
= 2.7–3.6
V
101
(V
IO
= 2.7–3.6
V)
112
(V
IO
= 1.65–3.6
V)
120
(V
IO
= 1.65–3.6
V)
Max. Access Time (ns)
90
100
110
120
Max. CE# Access Time (ns)
90
100
110
120
Max. Page access time
(t
PACC
)
25
30
30
40
30
40
Max. OE# Access Time (ns)
25
30
30
40
30
40
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
ACC
CE#
OE#
STB
STB
DQ0
DQ15
Sector Switches
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A21–A0
相關(guān)PDF資料
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