參數(shù)資料
型號: AM29LV640MU101WHI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
中文描述: 4M X 16 FLASH 3V PROM, 100 ns, PBGA63
封裝: 12 X 11 MM, 0.80 MM PITCH, FBGA-63
文件頁數(shù): 23/58頁
文件大小: 1170K
代理商: AM29LV640MU101WHI
22
Am29LV640MU
June 12, 2003
A D V A N C E I N F O R M A T I O N
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
(00h not supported)
2Ah
2Bh
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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