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參數(shù)資料
| 型號： | AM29LV640MU101RPCI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with |
| 中文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, BGA-64 |
| 文件頁數(shù)： | 52/58頁 |
| 文件大小： | 1170K |
| 代理商： | AM29LV640MU101RPCI |
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June 12, 2003
Am29LV640MU
51
A D V A N C E I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
. Programming specifications assume
that all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed ina single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables
12
and
11
for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Chip Erase Time
32
128
sec
Single Word/Byte Program Time (Note 3)
Byte
100
TBD
μs
Word
100
TBD
μs
Accelerated Single Word/Byte Program Time
(Note 3)
Byte
90
TBD
μs
Word
90
TBD
μs
Total Write Buffer Program Time (Note 4)
352
TBD
μs
Effective Write Buffer Program Time (Note 5)
Per Byte
11
TBD
μs
Per Word
22
TBD
μs
Total Accelerated Effective Write Buffer
Program Time (Note 4)
282
TBD
μs
Effective Accelerated Write Buffer PRogram
Time (Note 4)
Byte
8.8
TBD
μs
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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