參數(shù)資料
型號： AM29LV640ML101PCI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, BGA-64
文件頁數(shù)： 49/62頁
文件大?。?/td> 602K
代理商： AM29LV640ML101PCI
December 14, 2005
Am29LV640MH/L
47
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1.
2.
Not 100% tested.
See the “Erase and Programming Performance” section for more
information.
For 1–16 words/1–32 bytes programmed.
Effective write buffer specification is based upon a
16-word/32-byte write buffer operation.
Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
3.
4.
5.
6.
AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD
for information on AC operation with V
IO
≠
V
CC
.
When using the program suspend/resume feature, if the
suspend command is issued within t
, t
must be fully
re-applied upon resuming the programming operation. If the
suspend command is issued after t
, t
is not required
again prior to reading the status bits upon resuming.
7.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
AVWL
t
WC
t
AS
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
WHDX
t
DS
t
DH
t
OEPH
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
CS
t
CH
t
WP
t
WPH
CE# Setup Time
Min
0
ns
CE# Hold Time
Min
0
ns
Write Pulse Width
Min
35
ns
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
11
μs
Per Word
Typ
22
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
8.8
μs
Per Word
Typ
17.6
μs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
100
μs
Word
100
μs
Single Word/Byte Accelerated
Programming Operation (Note 2, 5)
Byte
Typ
90
μs
Word
90
μs
t
WHWH2
t
WHWH2
t
VHH
t
VCS
t
BUSY
t
POLL
Sector Erase Operation (Note 2)
Typ
0.5
sec
V
HH
Rise and Fall Time (Note 1)
V
CC
Setup Time (Note 1)
WE# High to RY/BY# Low
Min
250
ns
Min
50
μs
Min
90
100
110
120
ns
Program Valid Before Status Polling (Note 7)
Max
4
μs
相關(guān)PDF資料
PDF描述
AM29LV640ML101REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101RFI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101RPCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112FI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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