參數(shù)資料
型號(hào): AM29LV640ML101PCI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, 1 MM PITCH, BGA-64
文件頁數(shù): 36/62頁
文件大?。?/td> 602K
代理商: AM29LV640ML101PCI
34
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
Table 9.
Command Definitions (x8 Mode, BYTE# = V
IL
)
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
A
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 9)
SecSi
Sector Factory Protect
(Note 10)
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
0C
X1E
01
4
AAA
AA
555
55
AAA
90
X06
(Note 10)
Sector Group Protect Verify
(Note 11)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Enter SecSi Sector Region
3
AAA
AA
555
55
AAA
88
Exit SecSi Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (Note 12)
6
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
AAA
AA
555
55
AAA
F0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program (Note 14)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 15)
2
XXX
90
XXX
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase Suspend (Note 16)
1
XXX
B0
Program/Erase Resume (Note 17)
1
XXX
30
CFI Query (Note 18)
1
AA
98
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address . Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
4.
See
Table 1
for description of bus operations.
All values are in hexadecimal.
Shaded cells indicate read cycles. All others are write cycles.
During unlock and command cycles, when lower address bits are
555 or AAA as shown in table, address bits above A11 are don’t
care.
Unless otherwise noted, address bits A21–A11 are don’t cares.
No unlock or command cycles required when device is in read
mode.
Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend) when
device is in autoselect mode, or if DQ5 goes high while device is
providing status information.
Fourth cycle of autoselect command sequence is a read cycle.
Data bits DQ15–DQ8 are don’t care. See
Autoselect Command
Sequence
section or more information.
Device ID must be read in three cycles.
5.
6.
7.
8.
9.
10. If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
address sector, data is 88h for factory locked and 08h for not
factor locked.
11. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
12. Total number of cycles in command sequence is determined by
number of bytes written to write buffer. Maximum number of
cycles in command sequence is 37, including "Program Buffer to
Flash" command.
13. Command sequence resets device for next command after
aborted write-to-buffer operation.
14. Unlock Bypass command is required prior to Unlock Bypass
Program command.
15. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
16. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
17. Erase Resume command is valid only during Erase Suspend
mode.
相關(guān)PDF資料
PDF描述
AM29LV640ML101REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101RFI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101RPCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112FI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640MU101RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPC1 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV641DH120REF 制造商:Spansion 功能描述:Flash Memory IC