參數(shù)資料
型號: Am29LV400T-150WAEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 28/40頁
文件大小: 516K
代理商: AM29LV400T-150WAEB
Am29LV400
34
PREL I M I N AR Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
50
65
ns
tDVEH
tDS
Data Setup Time
Min
50
65
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
50
65
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
35
ns
tWHWH1
Programming Operation
Byte
Typ
9
s
Word
Typ
11
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
相關(guān)PDF資料
PDF描述
Am29LV400B-150WAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29F800BT-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F800BB-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29LV010BB-55FEB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29F800BT-55FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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