參數(shù)資料
型號: Am29LV400T-150WAEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 27/40頁
文件大小: 516K
代理商: AM29LV400T-150WAEB
33
Am29LV400
PR EL IMIN AR Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
20514C-24
Figure 20.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
RESET#
tVIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 3 V
20514C-25
Figure 21.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
Am29LV400B-150WAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29F800BT-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29F800BB-55FEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
Am29LV010BB-55FEB 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29F800BT-55FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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