參數(shù)資料
型號: AM29LV2562ML120RPII
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 16M X 32 FLASH 3V PROM, 120 ns, PBGA80
封裝: 18 X 12 MM, FBGA-80
文件頁數(shù): 42/69頁
文件大小: 1451K
代理商: AM29LV2562ML120RPII
40
Am29LV2562M
October 9, 2003
P R E L I M I N A R Y
duces status information on DQ15–DQ0. The system
can use DQ7 and DQ15, or DQ6 and DQ14 and DQ2
and DQ10 together, to determine if a sector is actively
erasing or is erase-suspended. Refer to the Write Op-
eration Status section for information on these status
bits.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 and DQ15 or DQ6
and DQ14 status bits, just as in the standard word pro-
gram operation. Refer to the Write Operation Status
section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
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